SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, launched the SJDP120R340, a normally on SiC trench JFET that, when compared with silicon MOSFETs, enables higher switching speeds and substantially lower losses.
Rated at 1200V with a maximum on-state resistance of 340 mΩ (typical RDS,on of 270 mΩ), these new devices feature a positive temperature coefficient for ease of paralleling and extremely fast switching with no tail current at 150 °C. Key applications include photovoltaic microinverters, SMPS and UPS, motor drives, and induction heating.
Explains SemiSouth’s Director of Sales, Dieter Liesabeths: “Because of the small die size and our compact device design, the new SJDP120R340 normally on SiC trench JFETs are very cost-effective. Samples are available today; with volume production set to begin in Q2 2012 with pricing below $7 in quantities of 1000.”
SemiSouth Laboratories, Inc.