Toshiba Electronics Europe GmbH (“Toshiba”) enhances motor control solutions by launching two single-channel H-bridge drivers …
Power devices
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Power devices
SemiQ 1200 V Third-Generation SiC MOSFET Cuts Size While Improving Performance and Reducing Switching Losses in High-Power Applications
by gabiSemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for …
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The OPTIREG™ Power Management IC (PMIC) portfolio enables highly efficient voltage regulation, offering pre- and …
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Rutronik is adding the BM6GD11BFJ-LB single-channel gate driver with integrated insulation from ROHM to its …
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Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC …
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The TSR 2N and TSR 3N are two step-down switching regulator series (2A and 3A) …
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Power devices
Infineon 2025 predictions – Gallium Nitride (GaN) semiconductors: GaN to reach adoption tipping points in multiple industries, further driving energy efficiency
by gabiAs the world continues to face the challenges of climate change and environmental sustainability, Infineon …
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Power devices
FORVIA HELLA selects Infineon’s new CoolSiC™ Automotive MOSFET 1200V for its next generation of charging solutions
by gabiFORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V …