Fujitsu is launching the 8-Mbit-FRAM with the highest density up to date: the MB85R8M2T (Distribution: Rutronik) memory is an ideal solution to eliminate batteries for SRAM in industrial machinery. It is particularly suitable for applications where high data throughput is required and data integrity is critical.
Fujitsu‘s new FRAM eliminates the need both of an SRAM and the related backup battery. This allows manufacturers not only to develop more compact designs, but also to save costs for components and maintenance. Compared to an SRAM in a 44-pin TSOP package, the MB85R8M2T saves about 90% of the mounting surface area for memory parts.
With over ten trillion guaranteed read/write cycles, the MB85R8M2T has a much longer life than non-volatile memory EEPROMs from competitors. Thus, it is ideally suited for industrial applications that require frequent data rewriting, such as real-time data logging and 3D position data logging.
Due to its wide supply voltage range from 1.8V to 3.6V and the SRAM-compatible parallel interface, the FRAM can be flexibly integrated into designs.
The MB85R8M2T is already in mass production in a 48-pin FBGA package with very small dimensions of 8.00 x 6.00mm, samples can be requested from Rutronik as of now.
You will find more information on the MB85R8M2T from Fujitsu on the e-commerce platform www.Rutronik24.com (where you can also place orders directly):
https://www.rutronik24.com/product/fujitsu/mb85r8m2tpbs-m-jae1/11001954.html
Contact Person (Rutronik): Isabell Weinlein, Product Sales Manager Memories
Tel: +49 7231 801 1719; e-mail: isabell.weinlein@rutronik.com
Rutronik | www.rutronik.com