Infineon advances gallium nitride (GaN) innovation in automotive with first 100 V automotive-qualified transistors

by gabi
CoolGaN™ Automotive Transistor 100 V G1 family

Infineon is launching the CoolGaN™ Automotive Transistor 100 V G1 family for production.

Infineon Technologies AG is further advancing on its path to become a leading GaN powerhouse and bolstering its position as the world’s leader in automotive semiconductors by introducing its first gallium nitride (GaN) transistor family qualified to the Automotive Electronics Council (AEC) standard for automotive applications.

The company is launching the CoolGaN™ Automotive Transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN Automotive Transistors and bidirectional switches. This reinforces the commitment of Infineon to providing innovative solutions that meet the evolving needs of the automotive industry – from low-voltage infotainment systems addressed by the new 100 V GaN transistor to future HV product solutions in onboard chargers and traction inverters.

Comments

“Infineon will advance its world-leading position for semiconductor solutions in the automotive industry by bringing GaN power technology to the growing software-defined and electric vehicle market,” says Johannes Schoiswohl, Head of the GaN Business Line at Infineon. “Our 100 V GaN auto transistor solutions and the upcoming portfolio extension into the high-voltage range are an important milestone in the development of energy-efficient and reliable power transistors for automotive applications.”

Automotive features such as Advanced Driver Assistance Systems (ADAS), new climate control and infotainment systems require higher power and more efficient power conversion solutions while minimizing strain on the battery. Therefore, demand is growing for compact and efficient power supply solutions which are highly enabled by the semiconductor material gallium nitride. GaN power devices offer higher energy efficiency in a smaller form factor and lower system cost compared to traditional silicon-based components.

Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Featuring high efficiency in space-saving size, Infineon’s new family of 100 V CoolGaN transistors is ideal for applications such as zone control & main DC-DC converters, high-performance auxiliary systems, and Class D Audio amplifiers.

Infineon will continuously extend its portfolio of GaN automotive-qualified semiconductor solutions that will further drive the adoption of GaN based solutions in automotive.

Availability

Infineon’s new CoolGaN Automotive Transistors 100 V G1 are now available. Further information on IGC033S10S1Q and IGB110S10S1Q can be found here.

Infineon is supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage CoolGaN Automotive Transistors and bidirectional switches.

Infineon Technologies

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