Microchip announces a new family of 1.8V Serial Quad I/O™ (SQI) SuperFlash® Memory devices: SST26WF016B. These devices offer 16-Mbit of
memory and are manufactured with Microchip’s high-performance SuperFlash technology, which provides the industry’s fastest erase times and superior reliability.
The SST26WF016B provides the fastest erase times of any competing device due to the use of SuperFlash technology. Sector and block erase commands are completed in just 18 ms and a full chip erase operation is completed in 35 ms. Competing devices require in the range of 10 to 20 seconds to complete a full chip erase operation, making SST26WF016B approximately 400 times faster. The fast erase times can provide a significant cost savings to customers by minimising the time required for testing and firmware updates, therefore increasing their manufacturing throughput.
The SQI interface is a high-speed 104 MHz 4-bit multiplexed I/O serial interface which allows for high-data throughput in a low pin-count package. This interface enables low latency execute-in-place (XIP) capability, allowing programmes to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device. The SST26WF016B provides faster data throughput than a comparable x16 parallel Flash device without the associated high cost and high-pin count of parallel Flash. The SQI interface also offers full command-set backwards-compatibility to traditional Serial Peripheral Interface (SPI) protocol.
Designed for low-power consumption, the SST26WF016B helps to maximise battery life in portable applications. Typical standby current consumption is
10µA and a deep power-down mode further reduces typical current consumption to 2.5µA. The typical active read current at 104 MHz is 15mA. The combination of 1.8V operation with low-power consumption and small form factor packaging makes the SST26WF016B an excellent choice for applications such as portable medical devices, Bluetooth® headsets, GPS, camera modules and hearing aids.
• New NOR Flash memory devices combine industry’s fastest erase times and superior reliability
• Full chip erase times around x400 faster than competing devices
• Low operating voltage range, from 1.65 to 1.95V, and power-saving modes
• SQI™ multiplexed I/O serial interface enables high-data throughput in a low pin-count package