Mouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation …
Tag:
SiC
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Power devices
New Toshiba 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
Toshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new …
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Power modules
Infineon nominated for “Deutscher Zukunftspreis” 2024 with innovative silicon carbide solution
Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Companies
New eBook from Mouser Electronics and onsemi Highlights the Benefits of Silicon Carbide Power Electronics
Mouser Electronics, Inc., the authorised global distributor with the newest electronic components and industrial automation …
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SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for …
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Companies
Infineon opens the world’s largest and most efficient SiC power semiconductor fab in Malaysia
As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened …
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With three new half-bridge modules in SiC MOSFET technology, the manufacturer StarPower is expanding its …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …