Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. …
Tag:
GaN
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Power devices
Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors
by gabiRenesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, announced that it is supporting …
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Power applications
Infineon CoolGaN™ technology boosts power performance in network PoE applications of Universal Microelectronics
by gabiInfineon Technologies provides CoolGaN™ power transistors to Universal Microelectronics Co., Ltd. (UMEC) for the company’s …
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Power modules
Infineon signs MoU with Lingji to develop high-performance gallium nitride (GaN)-based inverters for light electric vehicles
by gabiInfineon Technologies and Lingji Innovation Technology Co., Ltd., a subsidiary of Ninebot, signed a Memorandum …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Power devices
Renesas Strengthens Power Leadership with New GaN FETs (TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS) for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
by gabiRenesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage …
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