Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection …
Power devices
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Power devices
Infineon presents H7 variant of the Gen7 discrete 650 V TRENCHSTOP™ IGBTs for energy-efficient power applications
by gabiInfineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its 7th generation TRENCHSTOP™ IGBT family …
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Nexperia, the essential semiconductor expert, today announces the expansion of its analog and logic product …
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Power devices
Nexperia NBM5100A/B and NBM 7100A/B Battery Boosters Greatly Extend Battery Life and Performance for IoT Apps, Now at Mouser
by gabiMouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection …
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Power devices
High Voltage FRED from PANJIT at Rutronik: Increased efficiency and reliability of power supply
by gabiRutronik is adding the Optima and Speedy high-voltage FRED types with 600 V and 1200 …
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Power devices
Infineon extends its PQFN 2×2 mm² product portfolio with best-in-class OptiMOS™ power MOSFETs
by gabiA small footprint of discrete power MOSFETs plays a critical role in achieving space savings, …
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Power devices
High withstand voltage 76V Sense pin isolation 0.5µA Low Power Multi-Function Voltage Detector XC6138 Series
by gabiTorex Semiconductor Ltd. has launched a new voltage detector — XC6138 series. The XC6138 series …
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Power devices
Infineon adds 650 V TOLL portfolio to its CoolSiC™ MOSFET family for better thermal performance, power density, and easier assembly
by gabiAs digitalization, urbanization, and the rise of electro-mobility continue to shape the rapidly evolving world, …
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Toshiba Electronics Europe GmbH (“Toshiba”) launched a 12V common-drain N-channel MOSFET with a current rating …
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Power devices
SiC 650V Schottky barrier diodes with forward voltage of 1.2V released by Toshiba
by gabiToshiba Electronics Europe GmbH (“Toshiba”) announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier …