Nexperia E-Mode GAN FETs for Low and High-Voltage Applications Now in Stock at Mouser Electronics

by gabi

Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components™, is now stocking power Gallium Nitride FETs (GaN FETs) in an e-mode (enhancement mode) configuration for low (100 V to 150 V) and high (650 V) voltage applications from Nexperia. These power GaN FETs offer enhanced power density through reduced conduction and switching losses. These GaN devices are ideal for consumer and industrial power applications, including networkingautomation, and communication infrastructure.

The Nexperia 650 V E-Mode GAN FETs feature RDS(on) values between 80 mΩ and 190 mΩ) in a choice of DFN 5×6 mm and DFN 8×8 mm packages. These improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power. 

Nexperia now also offers a 100 V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150 V (7 mΩ) device in an FCLGA package. These devices are suitable for various low-voltage (<150 V), high-power applications to deliver, for example, more efficient DC-DC converters in data centers, faster charging (e-mobility and USB Type-C™), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptops and game consoles.

GaN FETs offer the highest power efficiency with the most compact solution size in many power conversion applications, features that substantially reduce the bill of materials (BOM). GaN-based devices offer the fastest transition and switching capability (highest dv/dt and di/dt) and deliver superior efficiency in both low-power and high-power conversion applications. The outstanding switching performance of Nexperia’s e-mode GaN FETs is attributable to very low Qg and QOSS values, while their low RDS(on) enables more power-efficient designs.

To learn more about Nexperia E-Mode GAN FETs, visit

Mouser Electronics

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