New from now on MSC relating to 2Mbit SPI FRAM chip from Fujitsu is particularly characterized by a high storage density and low voltage. The faster SPI interface improves energy efficiency and simplifys the system architecture.
The new SPI 2Mbit FRAM product offers a considerably faster and less power-hungry alternative to EEPROM at high density level, resulting in systems with less power consumption, better data security and a longer battery life. The new SPI 2 Mbit FRAM product belongs to the highest density ranges of SPI FRAM Fujitsu is offering. With 10 trillion read/write cycles, it is ideal for applications such as smart meters, industrial machinery and medical devices. Compared to EEPROM with identical density, MB85RS2MT reduces power consumption by 92 percent for writing operations. It can also make substantial reductions to component costs, mounting footprint and power consumption by replacing all of the technologies required for the system (say EEPROM, SRAM and battery) by a single chip. As a result, FRAM strongly promotes the development of smaller systems that are more power-efficient and maintenance friendly. Detailed information about the new SPI 2 Mbit FRAM devices can be requested by sending an email to memories-fujitsu@msc-ge.com
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