Vishay Intertechnology, Inc. introduced two new IHDM Automotive Grade edge-wound, through-hole inductors in the 1107 …
Power applications
-
-
Power devices
Nexperia launches ESD protection diodes (PESD1V0C1BSF and PESD1V0H1BSF) for USB4 and Thunderbolt ensuring signal integrity beyond 10 GHz
by gabiNexperia introduced a new series of five high-performance protection 1V diodes that provide optimized protection …
-
Power devices
iDEAL Signs Technology Partner Agreement for SuperQ MOSFETs with Power System Specialist Richardson Electronics, Ltd.
by gabiiDEAL Semiconductor, a fabless power semiconductor company focused on delivering breakthrough efficiencies, has announced it …
-
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
-
Passive components
Specifically designed for HV applications in vehicles: BT2M12006R0TPA, 1,200 V DSL (Discrete SiC Line) from Bosch is soon available from Rutronik
by gabiRutronik’s portfolio for automotive power electronics has been expanded with the BT2M12006R0TPA from Bosch. This …
-
Power modules
Würth Elektronik expands its MagI³C series with variable step-down modules featuring high current outputs
by gabiWürth Elektronik has expanded its successful MagI³C-VDLM power module series with two new models. With …
-
Power devices
Infineon’s CoolSiC™ MOSFETs 1200 V G2 in a Q-DPAK package enable higher power density for industrial applications
by gabiInfineon Technologies AG has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) …
-
Power applications
Gate driver photocouplers from Toshiba – TLP579xH – enhance MOSFETs and IGBTs switching efficiency in industrial equipment
by gabiToshiba extends its lineup to control 1A and 6A class gate drive currents for small- …
-
-
Power devices
Next-generation package for power MOSFETs (the 80V TPM1R908QM and the 150V TPM7R10CQ5) achieves significant on-resistance and thermal resistance reductions
by gabiToshiba Electronics Europe GmbH (“Toshiba”) announces the launch of two new N-channel power MOSFETs, the …