Rutronik is adding the BM6GD11BFJ-LB single-channel gate driver with integrated insulation from ROHM to its range. The components can control GaN transistors with high electron mobility (high-electron-mobility transistor, HEMT) even at high speeds and have an isolation voltage of up to 2,500 VRMS, a minimum I/O latency of 60 ns, and a minimum input pulse width of just 65 ns. In addition, an under-voltage lockout (UVLO) is integrated into the input side (between VCC1 and GND1) and the output side (between VCC2 and GND2), respectively. The drivers operate reliably over a wide operating temperature range of -40°C to +125°C. They are currently considered the best of their kind for the industrial equipment market. They are available at www.rutronik24.com.
The output driver pins on the source and sink side are separated. These pins generate a switching waveform with a rise and fall edge that can be customized by inserting a resistor between the gate pins of the GaN HEMT.
Typical circuit. (Copyright: ROHM)
The components are built into a SOP-JW8 package with a form factor of 4.9 mm x 6.0 mm x 1.65 mm.
Features at a glance:
- Built-in galvanic insulation
- Undervoltage lockout function (UVLO)
- Output voltage: 4.5 V to 6.0 V
- Input voltage: 4.5 V to 5.5 V
- Input pulse width 65 ns
- I/O delay time 60 ns
Applications examples:
- Industrial Equipment
- Industrial LiDAR
- Intermediate Bus Converters
- DC/DC converter
For more information to the 1-channel gate driver BM6GD11BFJ-LB from ROHM and a direct ordering option, please visit our e-commerce platform at www.rutronik24.com.