To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET in the PowerPAK® 10×12 package with best in class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32 % while offering 58 % lower on-resistance than 40 V MOSFETs in the TO-263-7L.
With on-resistance down to 0.34 mΩ typical at 10 V, the device released today minimizes power losses from conduction to increase efficiency while improving thermal performance with a low RthJC of 0.21 °C/W typical. By allowing designers to utilize one device instead of two in parallel to achieve the same low on-resistance, the SiJK140E also improves reliability and mean time between failures (MTBF).
The MOSFET features a bond-wireless (BWL) design that minimizes parasitic inductance while maximizing current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200 A, the SiJK140E offers a continuous drain current up to 795 A for increased power density while providing a robust SOA capability. Occupying an area of 120 mm2, the device’s PowerPAK 10×12 package saves 27 % PCB space compared to the TO-263-7L while offering a 50 % lower profile.
The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. To avoid shoot-through in these products, the standard-level FET offers a high threshold voltage of 2.4Vgs. RoHS-compliant and halogen-free, the MOSFET is 100 % Rg and UIS tested.
Comparison Table PowerPAK 10 x 12 vs. TO-263-7L
| Part number | SiJK140E | SUM40014M | Performance Improved | |
| Package | PowerPAK10x12 | TO-263-7L | – | |
| Dimensions (mm) | 10 x 12 | 10.4 x 16 | +27 % | |
| Height (mm) | 2.4 | 4.8 | +50 % | |
| VDS (V) | 40 | 40 | – | |
| VGS (V) | ± 20 | ± 20 | – | |
| Configuration | Single | Single | – | |
| VGSth (V) | Min. | 2.4 | 1.1 | +118 % |
| RDS(on) (m Ω) @ 10 VGS | Typ. | 0.34 | 0.82 | +58 % |
| Max. | 0.47 | 0.99 | +53 % | |
| Qg (nC) @ 10 VGS | Typ. | 312 | 182 | – |
| FOM | – | 106 | 149 | +29 % |
| ID (A) | Max. | 795 | 200 | +397 % |
| RTHC (C/W) | Max. | 0.21 | 0.4 | +47 % |
Samples and production quantities of the SiJK140E are available now, with lead times of 36 weeks.