Nexperia today announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now …
SiC
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Power devices
PCIM 2024: SemiQ Introduces 1700V SiC Schottky Discretes and Dual Diode Modules
by gabiSemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for …
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Power modules
WeEn Semiconductors Extends Range of Advanced SiC Technologies with TSPAK Packaging at PCIM 2024
by gabiWeEn Semiconductors, specialists in developing and manufacturing advanced power semiconductor products, has unveiled new families …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Power devices
TTI Now Stocking 2 A to 30 A Ultrafast Low-Side Power MOSFET and IGBT Gate Driver Series from Littelfuse
by gabiTTI, Inc. – Europe, a leading specialty distributor of electronic components, is now stocking the …
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Power devices
Infineon introduces CoolSiC™ MOSFET G2, the next generation of silicon carbide technology for high-performance systems that drive decarbonization
by gabiInfineon Technologies AG opens a new chapter in power systems and energy conversion and introduces …
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Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride …
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SemiQ Inc, a designer, developer, and global supplier of superior SiC solutions for ultra-efficient, high-performance, …
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