Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride …
Tag:
SiC
-
-
Power devices
New EiceDRIVER™ Power family of full-bridge transformer drivers for compact and cost-effective gate driver supplies
by gabiInfineon Technologies AG introduces the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, …
-
Power applications
Navitas’ 571% Increase in 3-Year Revenue Attains Deloitte Technology Fast 500™ Ranking for Third Consecutive Year
by gabiNavitas Semiconductor has announced that the company’s revenue growth has been acknowledged for the third …
-
Alternative Energy
Mouser Electronics, onsemi, and Würth Elektronik Partner to Provide Solutions for Next-Generation Solar and Storage Systems
by gabiMouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation …
-
Toshiba Electronics Europe GmbH (“Toshiba”) has developed new 1200V silicon carbide (SiC) MOSFETs with low …
-
Power devices
Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC
by gabiNavitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride …
-
Power devices
Nexperia and KOSTAL form a strategic partnership based on advancing automotive-grade wide bandgap devices
by gabiNexperia today announced that it has entered into a strategic partnership with KOSTAL, a leading …
-
Power modules
HybridPACK™ Drive G2 Fusion: Infineon combines silicon and silicon carbide in a cutting-edge power module for e-mobility
by gabiAffordability combined with high performance and efficiency is the key to making electric mobility accessible …
-
Power devices
Mouser Now Stocking Nexperia’s Expanded Range of 650 V Silicon Carbide Schottky Diodes for Industrial Applications
by gabiMouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation …
-
Power devices
New Toshiba 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
by gabiToshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new …