Toshiba Electronics Europe GmbH (“Toshiba”) has developed new 1200V silicon carbide (SiC) MOSFETs with low …
Tag:
SiC
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Power devices
Navitas Presents World’s First 8.5kW AI Data Center Power Supply Powered by GaN and SiC
by gabiNavitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride …
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Power devices
Nexperia and KOSTAL form a strategic partnership based on advancing automotive-grade wide bandgap devices
by gabiNexperia today announced that it has entered into a strategic partnership with KOSTAL, a leading …
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Power modules
HybridPACK™ Drive G2 Fusion: Infineon combines silicon and silicon carbide in a cutting-edge power module for e-mobility
by gabiAffordability combined with high performance and efficiency is the key to making electric mobility accessible …
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Power devices
Mouser Now Stocking Nexperia’s Expanded Range of 650 V Silicon Carbide Schottky Diodes for Industrial Applications
by gabiMouser Electronics, Inc., the authorized global distributor with the newest electronic components and industrial automation …
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Power devices
New Toshiba 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
by gabiToshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new …
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Power modules
Infineon nominated for “Deutscher Zukunftspreis” 2024 with innovative silicon carbide solution
by gabiInfineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for …