Infineon Technologies AG today announced that the company has succeeded in developing the world’s first …
Tag:
GaN
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Design
Pulsiv release the world’s most efficient 65W USB-C design with 30% lower temperatures, integrated half-active bridge, and 96% efficiency
Pulsiv Limited, the Cambridge (UK) innovator of power electronics technology, have announced the release of …
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Power devices
Highest power density for DCDC converters demonstrated by Vitesco Technologies using Infineon’s CoolGaN™ Transistors
DCDC converters are essential in any electric or hybrid vehicle to connect the high-voltage battery …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Power devices
Infineon introduces new CoolGaN™ Drive product family of integrated single switches and half-bridges with integrated drivers
Many different trends are taking center stage in both consumer electronics and industrial applications, such …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Semiconductor manufacturer Nexperia today announced plans to invest USD 200 million (appx. 184 million Euros) …
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Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
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Power devices
Infineon announces availability of its CoolGaN™ 700 V power transistors for increased performance in consumer and industrial applications
Infineon Technologies AG introduces the new CoolGaN™ Transistor 700 V G4 product family. The devices …
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Active components
CML launches Ka-band GaN power amplifier for cost-effective development of commercial satcom terminals
CML Micro has announced the launch of a Ka-band gallium nitride (GaN) power amplifier that …