Infineon Technologies is introducing a 12 kW reference design for high-performance power supply units (PSUs), …
GaN
-
-
Power modules
Infineon signs MoU with Lingji to develop high-performance gallium nitride (GaN)-based inverters for light electric vehicles
Infineon Technologies and Lingji Innovation Technology Co., Ltd., a subsidiary of Ninebot, signed a Memorandum …
-
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
-
Power devices
Renesas Strengthens Power Leadership with New GaN FETs (TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS) for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage …
-
Companies
Infineon advances on 300-millimeter GaN manufacturing roadmap as leading Integrated Device Manufacturer (IDM)
As the demand for gallium nitride (GaN) semiconductors continues to grow, Infineon Technologies AG is …
-
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
-
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
-
As artificial intelligence continues to redefine the boundaries of computing, the infrastructure powering these advancements …
-
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide …
-
Power devices
Infineon launches new radiation hardened GaN transistors, including one of the first DLA JANS certified GaN device
Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium …


