Source: Starpower Europe AG
With three new half-bridge modules in SiC MOSFET technology, the manufacturer StarPower is expanding its range of power semiconductors for use in the drivetrain of electric vehicles. The modules excel with a very low on-resistance combined with a high reverse voltage of 1200 V.
A common feature of the new MOSFET half-bridge modules is the use of silicon carbide (SiC) as the semiconductor material. This enables the development of particularly compact and efficient drive controllers with high power density. Another common feature of this product family with the type designations MD19HFC120N6HT, MD22HFC120N6HY and MD29HFC120N6HT is the high blocking voltage (VDSS) of 1200 V. This means that the products can be used in environments with an 800 V on-board power supply, as is common for upmarket electric vehicles. The individual models of the MOSFET family differ in their on-resistance (RDS(ON)), which covers the range between 1.8 mΩ and a maximum of 2.82 mΩ depending on the type – an excellent value in the competitive environment. All models in this product family can be easily connected in parallel to increase the current. Driving these MOSFETs does not require any complex measures either.
These MOSFETS are supplied in a 2-in-1 housing. This is optimized for low parasitic inductance in order to suppress unwanted oscillation tendencies. Heat loss is dissipated via a solid copper base plate with PINFIN structures for optimum cooling. The high-strength ceramic material silicon nitride (Si3N4) is used as the carrier substrate, employing the sophisticated AMB (Active Metal Brazing) process.