SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has announced a demo board showing the operation of its SiC JFETs in a cascode half-bridge configuration. Enabling a quick evaluation of the SJDP120R085 JFET, the demo board platform is suitable for many applications including boost, buck, inverter and PSU half-bridge power stage designs. In the cascode configuration, the JFET is driven via a source-connected MOSFET, allowing existing, commercially available MOSFET drivers to be used.
Normally-on SJDP120R085 1200 V power JFETs enable high-speed switching, are compatible with standard gate drive circuitry, and feature a positive temperature coefficient for ease of paralleling. The JFETs have a high saturation current (27A), low on-resistance per unit area (85 mΩ max), and improved switching performance.
The demo board comes complete with Gerber files and a BOM to allow users to build their own circuits. Comments Dieter Liesabeths, VP of Sales and Marketing: “Our SiC JFETs have industry-leading performance and we are committed to supporting them with the best available design tools.”
SemiSouth Laboratories, Inc.
www.semisouth.com