Toshiba Electronics Europe GmbH (“Toshiba”) launched a 12V common-drain N-channel MOSFET with a current rating …
Power devices
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Power devices
SiC 650V Schottky barrier diodes with forward voltage of 1.2V released by Toshiba
by gabiToshiba Electronics Europe GmbH (“Toshiba”) announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier …
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Nexperia, the expert in essential semiconductors, has just introduced the NBM7100 and NBM5100, revolutionary new types …
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Power devices
New 600 V discrete IGBTs from Nexperia for class-leading efficiency in power applications
by gabiNexperia, the essential semiconductor expert, today launched its entry to the insulated gate bipolar transistor …
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Power devices
Innoscience bidirectional VGaN HEMTs employed by OnePlus in battery protection board inside new high-performance smartphone
by gabiInnoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost, …
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Power devices
Toshiba releases a new range of low current, high input voltage LDO regulators
by gabiToshiba Electronics Europe GmbH (“Toshiba”) has launched the first three devices in the new TCR1HF …
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Power modules
Nexperia E-Mode GAN FETs for Low and High-Voltage Applications Now in Stock at Mouser Electronics
by gabiMouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection …
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Power devices
Toshiba launches 600V super junction N-channel power MOSFET series with ultra-low RDS(on)
by gabiToshiba Electronics Europe GmbH (“Toshiba”) has introduced a new series of N-channel power MOSFETs. The …
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Nexperia, the essential semiconductor expert, today announced a broadening of package options for its NextPower …