Toshiba Electronics Europe GmbH (“Toshiba”) launches the TLX9165T, an automotive photorelay in a 10-pin SO16L-T …
Power devices
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Passive components
Specifically designed for HV applications in vehicles: BT2M12006R0TPA, 1,200 V DSL (Discrete SiC Line) from Bosch is soon available from Rutronik
by gabiRutronik’s portfolio for automotive power electronics has been expanded with the BT2M12006R0TPA from Bosch. This …
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Power devices
Infineon’s CoolSiC™ MOSFETs 1200 V G2 in a Q-DPAK package enable higher power density for industrial applications
by gabiInfineon Technologies AG has launched the CoolSiC™ MOSFETs 1200 V G2 in a top-side-cooled (TSC) …
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Power devices
Next-generation package for power MOSFETs (the 80V TPM1R908QM and the 150V TPM7R10CQ5) achieves significant on-resistance and thermal resistance reductions
by gabiToshiba Electronics Europe GmbH (“Toshiba”) announces the launch of two new N-channel power MOSFETs, the …
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Power devices
iDEAL’s SuperQ Technology Powers into Production, Reveals 150V and 200V MOSFETs With Industry-Leading Figures of Merit
by gabiiDEAL Semiconductor’s SuperQ technology has entered full production, with the first products being 150 V …
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Power devices
Nexperia brings the benefits of clip-bonded FlatPower (CFP15B) packaging to bipolar junction transistors
by gabiNexperia announced the expansion of its bipolar junction transistor (BJTs) portfolio by introducing 12 new …
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Power devices
Infineon Technologies’ OptiMOS 6 150V Power MOSFETs, Now Available at Mouser, Offer Unparalleled Efficiency and Reliability
by gabiMouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection …
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Power devices
Nexperia boosts wide-bandgap portfolio with 1200V SiC Schottky diodes for power-intense infrastructure
by gabiNexperia announced the addition of two 1200V 20A silicon carbide (SiC) Schottky diodes to its …