Nexperia announced the launch of 16 new 80 V and 100 V power MOSFETs in …
Power devices
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Power devices
Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers, EVs, and Mobile Applications at CES 2025
by gabiNavitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride …
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Power devices
Nexperia launches miniaturized leadless logic ICs to save space and enhance reliability in automotive applications
by gabiNexperia introduced a new portfolio of logic ICs in tiny automotive-qualified MicroPak XSON5 leadless packaging. …
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Power devices
Improve the efficiency and reliability of switching power supplies: Vishay’s 1,200 V 3rd generation SiC Schottky diodes – at Rutronik
by gabiThe 3rd generation of 1,200 V SiC Schottky diodes (5 A – 40 A) with …
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Power devices
Vishay Intertechnology 40 V MOSFET in PowerPAK® 10×12 Package Offers Best in Class RDS(ON) of 0.34 mΩ to Increase Efficiency
by gabiTo provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. introduced a …
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Toshiba Electronics Europe GmbH (“Toshiba”) now provides engineering samples of its TB9084FTG, a MOSFET gate …
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Power devices
Explore the Benefits of GaN-Based Power Electronics in the New eBook from Mouser Electronics, Analog Devices, and Bourns
by gabiMouser Electronics, Inc., the New Product Introduction (NPI) leader™ empowering innovation, today announces a new …
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Power devices
New EiceDRIVER™ Power family of full-bridge transformer drivers for compact and cost-effective gate driver supplies
by gabiInfineon Technologies AG introduces the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, …
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Power applications
Navitas’ 571% Increase in 3-Year Revenue Attains Deloitte Technology Fast 500™ Ranking for Third Consecutive Year
by gabiNavitas Semiconductor has announced that the company’s revenue growth has been acknowledged for the third …
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Power devices
Vishay Intertechnology 150 V MOSFET Increases Efficiency With the Industry’s Lowest RDS(ON) of 5.6 mΩ and RDS(ON)*Qg FOM of 336 mΩ*nC
by gabiTo provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology, …