Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components™, is now stocking the GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board from GaN Systems. This compact gallium nitride (GaN) enhancement-mode (e-mode) half-bridge evaluation board packs some notable features while reducing the overall number of components and saving valuable board space.
The GaN Systems GS-EVB-HB-0650603B-HD board, available from Mouser Electronics, features two HEY1011-L12C GaN FET drivers and two 650 V, 60 A GaN e-mode transistors arranged in a half-bridge configuration. The HEY1011 is an isolated gate driver optimized for driving GaN FETs with fast propagation delay and high peak source/sink capability for use in high-frequency applications that require isolation, level-shifting or ground separation for noise immunity. Since the HEY1011 driver does not need secondary side power or bootstrap components, it frees up valuable board space and makes for a more cost-effective design.
To help alleviate the effects of gate-drain capacitor currents, the GS-EVB-HB-0650603B-HD uses a bipolar gate drive arrangement. The board can perform double pulse tests or connect a half-bridge to an existing LC power segment. The double pulse test is safely used to evaluate the switching characteristics of a power switch under hard switching conditions.
GaN Systems’ GS-EVB-HB-0650603B-HD half-bridge bipolar driver switch evaluation board is ideal for designers looking to develop high-power wireless chargers, industrial inverters, motor drive/VFDs, data centers, residential energy storage systems, and other power electronics-based applications.
To learn more, visit https://www.mouser.com/new/gan-systems/gan-systems-gs-evb-hb-0650603b-hd-eval-board/.