Long-term stability and high performance in industrial environments: in the current generation of ATP DRAM modules, the DDR4, the data transfer rate of up to 3200 MT/s ensures an increase in the possible maximum clock speed. The supply voltage here is just 1.2 V. High performance with lower power consumption thus allows the application in the high-performant areas of telecommunication infrastructures, network storage systems, network-attached storage (NAS) servers, micro/cloud servers and embedded systems such as industrial PCs. Large quantities of ATP DDR4 modules are available from stock at www.rutronik24.com.
The modules of the previous DDR3 series combine a data transfer rate of up to 1866 MT/s and supply voltages of 1.5 V and 1.35 V to achieve fast performance with higher energy savings.
Optional special features
An application-compliant coating film layer protects sensitive electronic circuits and modules from dust, moisture, corrosion, chemicals and extreme temperatures. Anti-sulfur resistors ward off the harmful effects of sulfur contamination. A 30 μ” thick gold finger coating and a printed circuit board consisting of 6-10 layers of PCB assemblies (PCBA) ensures better signal quality as well as mechanical reliability and durability of the modules. To ensure long-term stability, availability and consistent performance in industrial applications, optional features include the ability to withstand extreme temperatures from -40°C to 95°C.
Use in high-performance environments
These DRAM modules for enterprise and industrial applications are typically installed in high-performance environments such as data centers and hard-to-reach locations. Here, uninterrupted data processing is essential, as any downtime results in significant economic losses.
For more information about the DRAM modules from ATP and a direct ordering option, please visit our e-commerce platform at: www.rutronik24.com.