Infineon introduces CoolGaN-based HV IBC reference designs for 800 VDC architectures in AI data centers
Infineon Technologies introduces two new high-voltage Intermediate Bus Converter (HV IBC) reference designs to help customers accelerate the transition to AI server power architectures powered by +/-400 V and 800 Volt DC (VDC). Enabled by Infineon’s 650 V CoolGaN™ switches, the designs target hyperscalers, power architects, and server OEMs seeking higher rack power, lower power distribution losses, and improved thermal performance at rising AI workloads.
The reference designs address two different architectures: the 800-VDC-to-50-V design serves as an intermediate stage for downstream 48-V IBC modules, while the 800-VDC-to-12-V design enables direct conversion for compact server boards. For custom implementations, Infineon offers the digital controller XDPP1188-200C, which supports flexible output voltages of 48 V, 24 V, or 12 V.
Comments
“Infineon is moving forward on its path as a leader in powering artificial intelligence,” said Christian Burrer, Vice President Power Systems at Infineon. “Our HV IBC reference designs are giving customers a faster path to high-voltage data center architectures leveraging Infineon’s high-quality power semiconductors with system-level design expertise. By showcasing complete, high-efficiency implementations, customers can de-risk development, raise power density, and improve energy efficiency at scale.”
The 800 VDC or +/-400 V to 50 V HV IBC reference design was developed for next-generation AI data centers and demonstrates more than 98 percent efficiency at full load. Built using Infineon’s solution-optimized high-voltage and medium-voltage CoolGaN switches, EiceDRIVER™ gate drivers, and a PSOC™ microcontroller, it consists of two 3 kW 400 V to 50 V converter building blocks, which are configured in an input-series-output-parallel (ISOP) arrangement. The approach scales to 6 kW TDP and supports up to 10.8 kW for 400 µs, using a planar PCB integrated transformer with multiple synchronous rectifier stages and soft switching across all load conditions to reduce EMI. The compact implementation has a 60 x 60 x 11 mm form factor and achieves an exceptional 2.5 kW/in³ power density.
High-efficiency GaN-based designs enable scalable and compact AI data center power architectures
The second reference design is an ultra-thin HV IBC demo board, which converts an 800 VDC bus voltage directly to a 12 V intermediate rail. The design delivers 6 kW TDP and supports up to 10.8 kW for 400 µs. It operates as an ISOP half-bridge LLC converter and uses an innovative matrix-transformer design to achieve an 8 mm height in a 130 mm × 40 mm footprint. The ultra-thin design has a power density above 2300 W/in³ and enables innovative server board cooling concepts. The design reaches up to 98.2 percent peak efficiency and 97.1 percent efficiency at full load. To meet these stringent specifications, the design uses Infineon’s premium 650 V CoolGaN and 40 V OptiMOS™ 7 switches, with EiceDRIVER gate drivers and a PSOC microcontroller.
Both HV IBC reference designs are optimized for use with Infineon’s broad AI server power delivery portfolio from grid to core – spanning solid-state transformers and circuit breakers, high-voltage and intermediate bus conversion, as well as second-stage DC conversion power modules. Leveraging the benefits of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) to achieve the highest efficiency, density, and robustness, Infineon gives customers a clear path to end-to-end power architectures with proven high-quality components, consistent design support, and scalable performance for next-generation AI server platforms.
Availability
Learn more about the AI data center power conversion solutions from Infineon here.
APEC 2026
Don’t miss Infineon at APEC 2026, located at the Henry B. Gonzalez Convention Center in San Antonio, Texas, from March 22-26, 2026. Visit Infineon’s booth #1619 to see one of the industry’s broadest power device portfolios covering all relevant power technologies in silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). To book a media interview, please contact media.relations@infineon.com.
Infineon AI Day Taiwan
The Infineon We Power AI Day is an industry event for business and technology leaders in Taiwan. Together with our ecosystem partners and customers, we explore the latest advances in the field of power technologies. The goal is a sustainable AI infrastructure enabled by Infineon’s innovative solutions – from grid to core. The event will take place in Taipei on March 31.