Starpower Europe AG
Electric vehicle drives are controlled via electronic inverters. The semiconductor manufacturer StarPower has now introduced two three-phase IGBT modules for this type of application, which enable particularly space-saving solutions thanks to their compact design with six IGBTs in one housing.
A common feature of the modules is that they are fitted with trench IGBTs in an arrangement of six per housing with integrated temperature sensor. The trench semiconductor technology guarantees particularly low switching losses, high short-circuit protection and superior performance characteristics. Versions are available for 750 V / 660 A (model GD660HTA75P7H) and for 1200 V / 260 A (model GD260HTA120P7H).
The topology arrangement of a three-phase-bridge ensures a compact inverter design for main and auxiliary drive applications. Each IGBT is equipped with an integrated freewheeling diode.
The housings are optimized for low inductance. The GD660HTA75P7H model uses an electrically insulated all-copper base plate in PINFIN technology and the high-strength ceramic material silicon nitride (Si3N4) for optimum cooling. The high-voltage model GD260HTA120P7H uses a base plate in DBC technology (Direct Bonded Copper), also with a PINFIN structure, for cooling.
For customized design requirements, please contact info@starpowereurope.com.