Renesas Electronics Corporation launched the industry’s first 650 V GaN device with dual-side cooling for high-density power conversion in 800 V high-voltage DC (HVDC) AI data center architectures. The new TP65H020G4PLSGBD D-Mode device delivers 20 milliohms (mΩ) on-resistance — one of the lowest in its class — in an ultra-compact, dual-side-cooled (DSC) PQFN package that handles more power in less space. Renesas is currently sampling the device to major AI data center OEMs and ODMs.
Built on its Gen IV Plus GaN architecture, the device is purpose-built for the megawatt-scale demands driving next-generation AI data centers supporting up to 700 V operation. It targets the 800 V DC/DC intermediate bus converter (IBC) stage that steps down to 48 V, 12 V or 6 V, along with the battery backup (BBU) and capacitor bank (CBU) stages of the sidecar power rack.
Dual-side cooling in a smaller footprint
As rack power climbs from roughly 120 kW toward megawatt scale, space and heat have become critical factors in sustaining the power level. Unlike conventional top-side-cooled packages, the new device dissipates heat from both top and bottom, lowering top-side thermal impedance by 10%. Its 8 × 8mm PQFN footprint is also 57% smaller than the existing 10 × 15mm TOLT package.
The device incorporates the full strength of Renesas Gen IV Plus 650 V GaN technology: low gate charge and output capacitance, a built-in freewheeling diode with minimal reverse recovery and a high threshold voltage that runs without a negative gate bias. Engineers can drive it with a standard silicon gate driver, switch into the MHz frequency range to minimize passive components and cut overall BOM cost without requiring a specialized E-mode driver.
The new dual-side-cooled (DSC) PQFN package is defined in collaboration with major AI infrastructure customers, enabling an industry-standard footprint for sourcing flexibility. When paired with Renesas AUX controllers, gate drivers and MCUs, the GaN device creates a one-stop-shop power solution for OEMs, ODMs and hyperscalers moving to 800V architectures.
Reference designs for 800 V power conversion
Renesas has already validated the approach in reference hardware. A 6kW, 800 V-to-48 V LLC DC transformer (DCX) reference design built on the new device and controlled by a Renesas RA6T3 MCU reaches a power density of 2.6 kW/in³ with per-module testing measuring full-load efficiency 0.21% higher than an equivalent TOLT-based board. The smaller package also saves PCB space and enables a better-matched layout across the FETs. 800 V-to-12 V and 6 V DC/DC IBC reference designs also leverage the new DSC 8×8 platform, delivering similar enhanced performance, scalability and power density levels.
Comments
“Customers building megawatt-scale AI data centers are running out of board space and thermal headroom before they hit their power limits,” said John Wiggenhorn, Senior Product Line Director of High-Voltage GaN at Renesas. “With the industry’s first dual-side-cooled 650 V GaN, we cool the device from both sides and cut the footprint significantly, so designers can move more power through the intermediate bus without redrawing the board or adding more cooling hardware. And because it keeps the operational simplicity of the silicon gate drive customers already use, it’s an extremely easy upgrade.”
Renesas will showcase the new TP65H020G4PLSGBD GaN device as part of its 800V power solutions at OCP Global Summit, October 12-15 in San Jose, California.
Availability
The TP65H020G4PLSGBD is sampling today. Mass production is planned for mid-2027. More information about Renesas GaN solutions is available at: renesas.com/gan-fets.
Renesas Electronics Corporation