Specifically designed for HV applications in vehicles: BT2M12006R0TPA, 1,200 V DSL (Discrete SiC Line) from Bosch is soon available from Rutronik

by gabi
BT2M12006R0TPA

Specifically designed for HV applications in vehicles: BT2M12006R0TPA, 1,200 V DSL (Discrete SiC Line) from Bosch is soon available from Rutronik

Rutronik’s portfolio for automotive power electronics has been expanded with the BT2M12006R0TPA from Bosch. This is a powerful N-channel single switch based on silicon carbide (SiC) with a blocking voltage of 1,200V, a maximum on-resistance of 6.7mΩ and minimal switching losses – even at high currents. Specifically developed for high-voltage applications in the automotive sector, the component combines high efficiency in a compact discrete package with AEC-Q101 qualification. Samples of the BT2M12006R0TPA are available on request from Rutronik.

To support developers in designing customized control units, DSL uses Bosch’s own SiC chips with second-generation dual-channel SiC trench gate technology. These are available as bare die in addition to the package variant. The compact DSL with integrated Kelvin source pin is designed for maximum scalability and offers a 750 V variant in addition to the 1,200 V class for different system voltages in the e-mobility environment.

The combination of high scalability in a small footprint, thermal robustness and AEC-Q101 qualification makes the BT2M12006R0TPA the ideal choice for next-generation electric drive and vehicle applications.

Benefits at a glance:
  • Drain-source voltage: 1,200 V
  • Typical on-resistance (RDS(on)): 6.2 mΩ at 140 A / 25 °C
  • Power dissipation: up to 1,011 W
  • Fast recovery
  • Switching times: e.g. turn-on delay 183 ns, rise time 55 ns
  • Gate charge (QG): 389 nC (typ.)
Target application:
  • Automotive
    • Traction applications
    • On-board chargers
    • DC/DC converters
    • Electronic Battery Disconnect Unit (eBDU)
    • Inverters
Overview table of 750V and 1,200V models:
Type Voltage class

 

RDS(on)

[mΩ]

DC Current @ Tc = 25 °C DC Current @ Tc = 100 °C SiC MOSFET
BT2M07504R0TPA 750 V 4.0 360 A 275 A 2nd Gen
BT2M07503R4TPA 750 V 3.4 405 A 310 A 2nd Gen
BT2M07503R0TPA 750 V 3.0 445 A 345 A 2nd Gen
BT2M12006R7TPA 1200 V 6.7 245 A 185 A 2nd Gen
BT2M12006R0TPA 1200 V 6.0 260 A 200 A 2nd Gen
BT2M12004R8TPA 1200 V 4.8 310 A 235 A 2nd Gen

For more information to the products from Bosch and a direct ordering option, please visit our e-commerce platform www.rutronik24.com.

Rutronik

Related Articles

Leave a Comment