Vishay Intertechnology 650V and 1200V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications

40A to 240A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36V and QC Down to 56nC

by gabi

Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650V and 1200V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices offer the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.

The devices released today consist of 40A to 240A dual diode components in a parallel configuration, and 50A and 90A single phase bridge devices. Built on state of the art thin wafer technology, the diodes feature a low forward voltage drop down to 1.36V that dramatically reduces conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the diodes’ low QC down to 56nC allows for high speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175°C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.

Device Specification Table:

Part Number VR
(V)
IF(AV)
(A)
VF at
IF (V)
IFSM
(A)
QC
(nC)
Configuration
VS-SC40FA65 650 40 1.36 105 56¹ Two separate diodes, parallel pin-out
VS-SC80FA65 80 1.36 225 110¹ Two separate diodes, parallel pin-out
VS-SC120FA65 120 1.39 340 164¹ Two separate diodes, parallel pin-out
VS-SC160FA65 160 1.38 450 220¹ Two separate diodes, parallel pin-out
VS-SC200FA65 200 1.39 555 275¹ Two separate diodes, parallel pin-out
VS-SC240FA65 240 1.40 675 328¹ Two separate diodes, parallel pin-out
VS-SC50BA65 50 1.50 267 110¹ Single phase bridge
VS-SC90BA65 90 1.61 340 164¹ Single phase bridge
VS-SC40FA120 1200 40 1.39 130 112² Two separate diodes, parallel pin-out
VS-SC80FA120 80 1.4 260 224² Two separate diodes, parallel pin-out
VS-SC120FA120 120 1.42 385 333² Two separate diodes, parallel pin-out
VS-SC160FA120 160 1.44 500 444² Two separate diodes, parallel pin-out
VS-SC200FA120 200 1.45 620 553² Two separate diodes, parallel pin-out
VS-SC240FA120 240 1.45 690 651² Two separate diodes, parallel pin-out
VS-SC50BA120 50 1.5 328 223² Single phase bridge
VS-SC90BA120 90 1.9 500 332² Single phase bridge

¹ VR = 400V
² VR = 800V

Samples and production quantities of the new SiC diodes are available now, with lead times of 18 weeks.

Vishay Intertechnology

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