Advanced Power Electronics Corp. (USA), a leading manufacturer of MOS power semiconductors for DC-DC power conversion applications, has announced the new AP6922GMT-HF-3, a space-saving dual MOSFET for synchronous buck converter applications, with both the high-side (control) FET and low-side (synchronous) FET in one single 5×6mm PMPAK package.
AP6922GMT-HF-3 is a rugged device combining fast switching, low on resistance and cost-effectiveness. The control MOSFET (CH-1) has a drain-source voltage rating of 30V, a maximum on-resistance of 8.5mΩ, and a continuous drain current rating at 25°C of 15A, and has been chosen to optimise switching performance. The synchronous MOSFET (CH-2) also has a drain-source voltage rating of 30V and a continuous drain current rating at 25°C of 25.7A, with a maximum on-resistance of 3.8mΩ to minimise conduction losses. The reduced parasitic inductances as a result of the short internal conduction paths also contribute to improved performance.
Advanced Power Electronics
www.a-powerusa.com