New Toshiba 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
Toshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new…
Toshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new…
Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award…
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide…
Mouser Electronics, Inc., the authorised global distributor with the newest electronic components and industrial automation…
SemiQ Inc, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for…
As global decarbonization efforts drive demand for power semiconductors, Infineon Technologies AG has officially opened…
With three new half-bridge modules in SiC MOSFET technology, the manufacturer StarPower is expanding its…
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide…
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide…
Semiconductor manufacturer Nexperia today announced plans to invest USD 200 million (appx. 184 million Euros)…