Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Devices Now Available at 1700V
Silicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density
Silicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density
The BMZ Group, as a global innovator in the battery industry and an open system…
Efficient reliability when size matters: the Nordic nPM1100 is a dedicated power management IC (PMIC)…
Cost-effective dimmable and intelligent LED systems are expected to increase the market share disproportionately in…
Mouser Electronics, Inc., the authorized global distributor with the newest semiconductors and electronic components, has…
BMZ Germany GmbH and KOSTAL Solar Electric GmbH are excited to announce that within a…
New Lineup Provides High Reliability and Reduced SWaP; Co-Packaged Solution for Space Delivers World-Class GaN FET Driver Performance
Microchip’s Qi 1.3 reference design is compliant with the recently released Qi 1.3 specification and includes everything needed to quickly develop a Qi 1.3 certified transmitter
Delta, a global leader in power and thermal management solutions, today announced a partnership with…
CUI Devices’ Interconnect Group today announced the continued expansion of their power-only USB Type C…