New Toshiba 1200V SiC Schottky barrier diodes achieve typical low forward voltage of 1.27V
Toshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new…
Toshiba Electronics Europe GmbH (“Toshiba”) enhances its silicon carbide (SiC) diode portfolio with ten new…
Advanced Energy – a global leader in highly engineered, precision power conversion, measurement and control…
Nexperia introduced the NXF6501-Q100, NXF6505A-Q100, and NXF6505B-Q100 today. These are AEC-Q100 qualified, push-pull transformer drivers…
Infineon Technologies AG expands its OptiMOS™ 6 MOSFET portfolio with the new 135 V and…
Nexperia today announced two enhancements to its extensive Zener diode portfolio that both eliminate undesirable…
Toshiba Electronics Europe GmbH (“Toshiba”) announces a new automotive-compliant photorelay designed for 400V battery-related control…
Vicor, the leader in high‑performance power modules, announces the launch of a brand-new eBook highlighting…
Infineon Technologies AG today announced that the company has succeeded in developing the world’s first…
Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award…
Nexperia today announced the release of single and dual small-signal MOSFETs in miniature DFN packages.…