Navitas GaN ICs Drive Samsung Galaxy S22 Fast Charging
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones
Next-gen GaNFast™ ICs power 120W ‘in-box’ ultra-fast charger at top speed: 0-100% in only 17 minutes
Active Clamp Flyback (ACF) design combines peak efficiency above 92% with no-load power consumption below 20mW
Infineon’s CoolSiC™ MOSFETs use an optimized, state-of-the-art trench semiconductor process that enables both the lowest…
Advanced Energy APEC plenary session on plasma processes and booth 1443 showcasing latest industrial and medical power supplies
The future of power will be on display this month in Houston when Infineon Technologies…
Reduce the size and extend the life of bioimpedance (BioZ) remote-patient monitoring (RPM) devices with…
High-performance regulators and configurable E-CAP™ capacitors minimize the energy footprint of the digital economy
Software suite reduces downtime and material costs, while improving quality and providing deep insight into machine and human productivity
With the RSH2 series, RECOM adds a fully regulated, low-noise, and isolated 2 W version…