Power Integrations Demonstrates World’s First 2200 V GaN Technology for Next-Era High-Voltage Power Systems
Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200…
Power Integrations announced that PowiGaN™ gallium-nitride (GaN) technology is now rated at up to 2200…
Farnell has signed a distribution agreement with RIGOL Technologies, giving customers across EMEA easier access…
Navitas, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC)…
Toshiba has launched the XPJ1R504PB, an automotive-compliant 40V, 120A N-channel power MOSFET housed in the…
Infineon Technologies introduces the RIC70115, a radiation-hardened (rad hard) gallium nitride (GaN) high-electron mobility transistor…
Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection…
Infineon Technologies will supply CoolSiC™ MOSFETs 1200 V and matching dual-channel EiceDRIVER™ 2EDB9259Y gate drivers…
e-peas, a pioneer in ultra-low-power energy harvesting and power management solutions, announced the successful closing…
Infineon Technologies opened the Smart Power Fab in Dresden several months ahead of schedule. The…
OMRON Electronic Components Europe has introduced new G3VH SiC-MOSFET relays with voltage ratings of 3,300V…