Infineon pioneers world’s first 300 mm power gallium nitride (GaN) technology – an industry game-changer
Infineon Technologies AG today announced that the company has succeeded in developing the world’s first…
Infineon Technologies AG today announced that the company has succeeded in developing the world’s first…
Infineon Technologies AG has been nominated for the Deutscher Zukunftspreis 2024, the Federal President’s Award…
Nexperia today announced the release of single and dual small-signal MOSFETs in miniature DFN packages.…
Infineon Technologies AG has introduced its new StrongIRFET™ 2 power MOSFET 30 V portfolio, expanding…
Navitas Semiconductor, the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide…
XP Power today introduces the JMR03/10/20 series of 3W, 10W, and 20W ultra-compact, medically approved…
Nexperia today announced the latest extension to its popular portfolio of power bipolar junction transistors…
Toshiba Electronics Europe GmbH (“Toshiba”) has launched a small new intelligent power device (IPD) for…
Rutronik is expanding its MOSFET portfolio with the CoolMOS™ 8 series from Infineon. It follows…
Nexperia announced the addition of two new ideal diode ICs to its continuously growing portfolio…