Next-Generation TrenchFET® Gen IV 30V N-Channel Power MOSFETs feature On-Resistance down to 1.0mΩ at 10V and 1.35mΩ at 4.5V
Vishay Intertechnology, Inc. introduced the first devices in its next-generation TrenchFET® Gen IV family of…
Vishay Intertechnology, Inc. introduced the first devices in its next-generation TrenchFET® Gen IV family of…
International Rectifier, IR® introduced a family of highly integrated, ultra-compact, patent pending µIPM™ power modules…
SemiSouth Laboratories, Inc. has announced a new 1700V/ 1400mΩ silicon carbide JFET which simplifies start…
International Rectifier has launched the automotive qualified AUIRS2334S 600V IC for 3-phase inverterized motor drive…
International Rectifier introduced a highly innovative 600V automotive grade IGBT platform, COOLiRIGBT™ for use in…
Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor…
Silicon Laboratories Inc. introduced a web-based Isolator Power Consumption Calculator that streamlines the process of…
International Rectifier has launched an extensive portfolio of devices featuring IR’s latest low-voltage HEXFET® MOSFET…
Microchip announces its next generation of energy-measurement analogue front end (AFE), the MCP3911, which features…
Murata Power Solutions announced the MVAB120 series of high efficiency, typically up to 91%, open…