Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes
Murata has now begun volume production of two new multi-layer ceramic capacitors (MLCCs). Each of…
Würth Elektronik presents its WE-CCMF Ceramic Common Mode Filter
Enhanced process capabilities enable faster time-to-market of Smart Integrated Systems
Würth Elektronik introduces its WE-LHMD high-current inductor
Würth Elektronik introduces its WE-HIDA high-current inductor
Smaller, lighter and fewer losses – these demands are familiar in power electronics. Space and…
Automotive Grade Devices Offer Resistance Values up to 10 MΩ in 1206 Case Size With TCR of ± 25 ppm/K and Tight Tolerance of ±0.1 %
A team of researchers from Frankfurt University, Ferdinand-Braun Institute (both Germany) and Vilnius University (Lithuania) has managed to significantly improve the performance of TeraFETs, using GaN-based high-electron mobility transistors (HEMTs).
Proceeds from $400 Million Offering to Support Key Sustainability Initiatives