650 V Silicon Carbide FETs Offer Simple Silicon Substitution to Cut Losses in Power Systems
Achieve 15-20% loss reduction and higher frequency operation using standard silicon MOSFET gate drive
Achieve 15-20% loss reduction and higher frequency operation using standard silicon MOSFET gate drive
Texas Instruments (TI) today introduced several new power management chips that enable designers to boost…
650 V silicon carbide Schottky diodes feature superior switching performance and higher reliability
Kontron affiliate – focusing on software solutions and services – launch of SUSiEtec IoT platform for Edge and Cloud computing
The new 10.1″ RISC based Panel PC IOBA-10F from ICP Deutschland is designed for wall…
Omron Electronic Components Europe is releasing a new ultra-thin sealed surface-mounting tactile switch rated at 1 million operations.
ON Semiconductor, a global leader in image sensor technology, has recently announced its new AR0430…
Renesas Electronics announced two new fully encapsulated digital DC/DC PMBus® power modules that deliver the…
Renesas Electronics, a premier supplier of advanced semiconductor solutions, today announced the space industry’s first…
Today, practically every control and monitoring circuit uses shunt-based current measurements as the easy and cost effective alternative to sensor solutions. To achieve measuring results with the demanded accuracy, it is useful to understand how shunts work. Since the method is classed as a precision measuring technology it should not be regarded as a trivial task.