A team of researchers from Frankfurt University, Ferdinand-Braun Institute (both Germany) and Vilnius University (Lithuania) has managed to significantly improve the performance of TeraFETs, using GaN-based high-electron mobility transistors (HEMTs).
Proceeds from $400 Million Offering to Support Key Sustainability Initiatives
New IC Joins a Complete Family of DDR5 DIMM Solutions that Include the Registered Clock Driver, Power Management IC and SPD Hub
Partners with international advocacy organization Global Citizen on a televised and streamed special “One World: Together At Home” to be hosted April 18, 2020 in support of the World Health Organization’s COVID-19 Solidarity Response Fund
Mouser Electronics, Inc., the New Product Introduction (NPI) leader empowering innovation, announces its new Price…
By Sina Hoefer, Chief Editor at electronics-update.com
Infineon Technologies AG expands its CoolSiC™ Schottky diode 1200 V portfolio by adding six devices…
The more and more pronounced coronavirus pandemic worldwide is causing severe disruptions to global supply…
Renesas Electronics Corporation, a premier supplier of advanced semiconductor solutions, today announced the effects on…