Torex Semiconductor Ltd. (Tokyo Japan: President, Koji Shibamiya, 6616: 1st section at Tokyo Stock Exchange)…
More efficient, faster and smaller versus durability and safety: Combining these parameters poses major challenges…
Highest reliability diode arrays available protect aircraft, space systems and critical infrastructure from surges, spikes and electrostatic events
I3C Multiplexers and IO Expanders Deliver Increased Flexibility and 12.5MHz Speeds in a Small Footprint for Infrastructure Control Plane Applications
Analog Devices, Inc. (ADI) announces the release of the industry’s first Software Configurable Input/Output (I/O)…
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes
Enhanced process capabilities enable faster time-to-market of Smart Integrated Systems
A team of researchers from Frankfurt University, Ferdinand-Braun Institute (both Germany) and Vilnius University (Lithuania) has managed to significantly improve the performance of TeraFETs, using GaN-based high-electron mobility transistors (HEMTs).
Proceeds from $400 Million Offering to Support Key Sustainability Initiatives