Third generation 1200V SiC MOSFETs from Toshiba boost industrial power-conversion efficiency
New discrete MOSFETs combine superior RDS(on) x QGD figure of merit with proven Toshiba innovations for reliability and stability
New discrete MOSFETs combine superior RDS(on) x QGD figure of merit with proven Toshiba innovations for reliability and stability
Series supports back-to-back connection of external N-channel MOSFETs
Optimized for the main control of consumer and industrial equipment, and motor control
Improved performance and reduced losses will enhance power supply efficiency
First device in a series of six supports back-to-back connection of external N-channel MOSFETs
Device operates without a Hall sensor and reduces noise and vibration
New devices are suitable for many applications including smart meters and security
New devices significantly extend operating life of battery powered devices
The new device is suited for use with battery management systems
Ultra-thin SO6L package offers easy upgrade path to reduce height in existing and new designs