Toshiba announces new IGBT device based upon latest generation semiconductor process
Toshiba Electronics Europe GmbH (“Toshiba”) has launched a new 650V-rated discrete IGBT intended for use…
Toshiba Electronics Europe GmbH (“Toshiba”) has launched a new 650V-rated discrete IGBT intended for use…
Toshiba Electronics Europe GmbH (“Toshiba”) has launched two intelligent power products to control the driving…
Overcurrent protection with automatic recovery and fault-status indicator, plus active Miller clamp, simplify design and save bill of materials
New devices will enhance efficiency and reduce size in industrial applications
New discrete MOSFETs combine superior RDS(on) x QGD figure of merit with proven Toshiba innovations for reliability and stability
Series supports back-to-back connection of external N-channel MOSFETs
Optimized for the main control of consumer and industrial equipment, and motor control
Improved performance and reduced losses will enhance power supply efficiency
First device in a series of six supports back-to-back connection of external N-channel MOSFETs
Device operates without a Hall sensor and reduces noise and vibration