Toshiba launches third generation 650V silicon carbide (SiC) MOSFETs
New devices will enhance efficiency and reduce size in industrial applications
New devices will enhance efficiency and reduce size in industrial applications
New discrete MOSFETs combine superior RDS(on) x QGD figure of merit with proven Toshiba innovations for reliability and stability
Offering Higher Current Density Than Competing Solutions, AEC-Q200 Qualified Device Provides Ultra Low DCR of 0.24 mΩ and Inductance of 0.22 µH
SEGGER’s BigFAT specification, which enables any third party to store files larger than 4 GB on…
Sfera Labs is delighted to announce that, despite the worldwide supply chain shortage, the company…
With the LN920, Telit offers an LTE data card with an integrated Qualcomm® Snapdragon™ X12+…
Product launch: M12 panel mount connectors with L-coding and dip solder contacts
LinkSwitch-TN2Q supports 30-550 VDC input with integrated system-level protection
Especially for mainboards used in industrial PCs, ICP Germany offers DDR5 DIMM modules, which are…