Replace Silicon IGBTs with Industry’s Most Rugged Silicon Carbide Power Devices Now Available at 1700V
Silicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density
Silicon carbide portfolio with 1700V MOSFET die, discrete and power module devices extend designers’ options for efficiency, power density
Cost-effective dimmable and intelligent LED systems are expected to increase the market share disproportionately in…
BMZ Germany GmbH and KOSTAL Solar Electric GmbH are excited to announce that within a…
Delta, a global leader in power and thermal management solutions, today announced a partnership with…
Aiming high: KEMET‘s KONNEKT™ technology is a high-density package technology that enables components to be…
CIPOS™ Maxi SiC IPM is a 55 mΩ three-phase CoolSiC™ MOSFET-based open emitter intelligent power…
In the quest to increase power utilization efficiency and to achieve the computation of more…
Würth Elektronik expands WE-HCFT high current inductors with design 2504
Applications such as e-scooters, e-forklifts and other light electric vehicles (LEVs), as well as power tools and battery management systems,…
Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its growing portfolio of single-channel gate-driver…