Storage

Mouser Offers Extended Range of Smart Home Components & Solutions

23 SEPTEMBER 2021

Mouser Spotlight: Smart Home Technology

Renesas DDR5 I3C Bus Extension and SPD Hub Devices Qualified for AMI Firmware

29 APRIL 2021

Expanded I3C Ecosystem Now Includes Firmware, Software, and Hardware, Accelerating Product Qualification and Adoption for DDR5 Solutions

Renesas Introduces JEDEC-Compliant Precision Temperature Sensor for DDR5 Memory Modules

5 MAY 2020

New IC Joins a Complete Family of DDR5 DIMM Solutions that Include the Registered Clock Driver, Power Management IC and SPD Hub

Renesas Electronics Develops Low-Power Technology for Embedded Flash Memory Based on SOTB™ Process to Enable Energy Harvesting and Eliminate Need for Batteries

12 JUNE 2019

Achieves Read Energy of 0.22 pJ/bit at 64 MHz – Among the World’s Lowest Levels for Embedded Flash Memory on an MCU

Renesas Electronics Achieves Industry’s Lowest Standby Power of 13.7 nW/Mbit and 1.84 ns High-Speed Readout with New Embedded SRAM that Implements New Circuit Technology with SOTB Structure

24 JULY 2017

Prototyped Low-Power Embedded SRAM that Realizes Battery-Free Operation and Extended Battery Lifetimes for IoT, Home Electronics, and Healthcare Applications

Renesas Electronics Streamlines Memory Component Count in Data Center: Enables Quantity Reduction of Memory Devices to 1/15th and 60-Percent Reduction in Memory Power Consumption

7 JULY 2016

Reference Design Implemented Using Renesas LLDRAM-III and FPGA Technology, Supporting Traffic in the 100-Gigabit Class.

Renesas Electronics Introduces New Advanced Low-Power SRAM Products Contributing to Improved Reliability for Manufacturers’ Systems

15 OCTOBER 2013

Renesas Electronics introduced 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM (Advanced LP SRAM), the company’s flagship SRAM (static random access memory) devices. The new memory devices have a density of 4 megabits (Mb) and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers […]