Renesas Electronics Achieves Industry’s Lowest Standby Power of 13.7 nW/Mbit and 1.84 ns High-Speed Readout with New Embedded SRAM that Implements New Circuit Technology with SOTB Structure
24 JULY 2017Prototyped Low-Power Embedded SRAM that Realizes Battery-Free Operation and Extended Battery Lifetimes for IoT, Home Electronics, and Healthcare Applications
READ MORERenesas Electronics Streamlines Memory Component Count in Data Center: Enables Quantity Reduction of Memory Devices to 1/15th and 60-Percent Reduction in Memory Power Consumption
7 JULY 2016Reference Design Implemented Using Renesas LLDRAM-III and FPGA Technology, Supporting Traffic in the 100-Gigabit Class.
READ MORERenesas Electronics Introduces New Advanced Low-Power SRAM Products Contributing to Improved Reliability for Manufacturers’ Systems
15 OCTOBER 2013Renesas Electronics introduced 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM (Advanced LP SRAM), the company’s flagship SRAM (static random access memory) devices. The new memory devices have a density of 4 megabits (Mb) and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers […]
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