Storage

Renesas Introduces JEDEC-Compliant Precision Temperature Sensor for DDR5 Memory Modules

5 MAY 2020

New IC Joins a Complete Family of DDR5 DIMM Solutions that Include the Registered Clock Driver, Power Management IC and SPD Hub

Renesas Electronics Develops Low-Power Technology for Embedded Flash Memory Based on SOTB™ Process to Enable Energy Harvesting and Eliminate Need for Batteries

12 JUNE 2019

Achieves Read Energy of 0.22 pJ/bit at 64 MHz – Among the World’s Lowest Levels for Embedded Flash Memory on an MCU

Renesas Electronics Achieves Industry’s Lowest Standby Power of 13.7 nW/Mbit and 1.84 ns High-Speed Readout with New Embedded SRAM that Implements New Circuit Technology with SOTB Structure

24 JULY 2017

Prototyped Low-Power Embedded SRAM that Realizes Battery-Free Operation and Extended Battery Lifetimes for IoT, Home Electronics, and Healthcare Applications

Renesas Electronics Streamlines Memory Component Count in Data Center: Enables Quantity Reduction of Memory Devices to 1/15th and 60-Percent Reduction in Memory Power Consumption

7 JULY 2016

Reference Design Implemented Using Renesas LLDRAM-III and FPGA Technology, Supporting Traffic in the 100-Gigabit Class.

Renesas Electronics Introduces New Advanced Low-Power SRAM Products Contributing to Improved Reliability for Manufacturers’ Systems

15 OCTOBER 2013

Renesas Electronics introduced 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM (Advanced LP SRAM), the company’s flagship SRAM (static random access memory) devices. The new memory devices have a density of 4 megabits (Mb) and utilize a fine fabrication process technology with a circuit linewidth of 110 nanometers […]