Ceremony to be held at 10 am, November 17th on Neways’ booth, Hall A1, Stand 306, Messe München, Munich, Germany
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, and Neways Electronics (Neways), the international innovator in electronics for smart mobility, semiconductor and connectivity solutions, will sign an agreement to develop high efficiency, photovoltaic solar inverter products based on gallium nitride technology at Electronica 2022.
Dr, Giorgia Longobardi | Co-Founder & CEO, Cambridge GaN Devices: “Neways and CGD are perfectly aligned in our commitment to a sustainable future based on clean tech energy. We believe that this program to jointly develop photo-voltaic products that lead the world in terms of efficiency and performance will move the market forward and contribute to a better world.”
Hans Ketelaars | CTO, Neways Electronics: “Neways is committed to working with like-minded innovative companies to bring state-of-the-art, sustainable energy solutions to the market. The combination of Neways’ extensive systems experience and CGD’s high-efficiency, rugged and simple-to-use GaN devices is a perfect fit for this application.”
The partnership, which was forged after the two companies met while collaborating on the European-funded GaNext project, has already borne fruit. At Electronica, both on the Neways booth, and at CGD’s booth (Hall C3, Booth 535), visitors will be able to see a demo of a 3kW photovoltaic inverter jointly developed by the two companies. Using eight CGD65A055S2 GaN transistors, this transformer-less, ultra compact design achieves a power density of 1kW/L. With a Vin of 150-350VDC, a Vout of 230VAC and a switching frequency 350kHz the design has a maximum efficiency of 99.22%.