Toshiba Launches 1200V Silicon Carbide (SiC) MOSFET

19 OCTOBER 2020

Device offers significantly reduced losses thereby increasing power solution efficiency

Toshiba Electronics Europe GmbH (“Toshiba”) has launched a 1200V silicon carbide (SiC) MOSFET for high power industrial applications including 400V AC input AC-DC power supplies, Photovoltaic (PV) inverters and bi-directional DC-DC converters for uninterruptible power supplies (UPS).

The new TW070J120B power MOSFET is based upon SiC, a new wide bandgap material that allows devices to deliver high voltage resistance, high-speed switching, and low On-resistance when compared to conventional MOSFETs and insulated gate bipolar transistor (IGBT) products based upon silicon (Si). As a result, the new MOSFET will make a significant contribution to reduced power consumption and improved power density, leading to opportunities for system downsizing.

Fabricated with Toshiba’s second-generation chip design[1], the new SiC MOSFET offers enhanced reliability. Additionally, the TW070J120B realizes low input capacitance (CISS) of 1680pF (typ.), a low gate-input charge (Qg) of 67nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 70mΩ (typ.).

When compared with a 1200V silicon IGBT such as Toshiba’s GT40QR21, the new device reduces turn-Off switching loss by approximately 80% and switching time (fall time) by around 70%, while delivering low On-voltage characteristics with a drain current (ID) of up to 20A.

The gate threshold voltage (Vth) is set high (in the range 4.2V to 5.8V), which reduces the possibility of unintended or spurious turn On or Off. Furthermore, incorporation of a SiC Schottky barrier diode (SBD) with a low forward voltage (VDSF) of just -1.35V (typ.) also helps to reduce losses.

Housed in a TO-3P(N) package, the new TW070J120B MOSFET will enable the design of higher efficiency power solutions, especially in industrial applications, where the increased power density will also contribute to reduced equipment size and weight.

Shipments of the new device start today.

Additional information for this device is available from:  https://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/detail.TW070J120B.html

Toshiba Electronics Europe

Leave a Reply

Your email address will not be published. Required fields are marked *

  • We use your personal data ONLY to respond to your comments/requests.
  • To receive responses that are appropriate to your requests, we may transfer your email address and your name to the author of the article.
  • For more information on our Privacy Policy and Personal Data Processing, please visit the page: Privacy Policy (GDPR) & Cookies.
  • If you have any questions or concerns regarding the way we process your personal data, you can contact our Data Protection Officer at: gdpr@esp2000.ro
  • Subscribe to our magazine newsletter