Now at Mouser: TI’s LMG1210 MOSFET and GaN FET Driver for High-Frequency Applications

19 JULY 2019

Mouser Electronics, Inc., the industry’s leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking the LMG1210 200 V half-bridge MOSFET and GaN FET driver from Texas Instruments (TI). Part of TI’s industry-leading gallium nitride (GaN) power portfolio family, the LMG1210 enables higher efficiency, increased power density, and lower overall system size over traditional silicon-based alternatives, and are optimized specifically for speed-critical power-conversion applications.

The TI LMG1210, available from Mouser Electronics, is a 50-MHz half-bridge driver designed to work with enhancement mode GaN FETs up to 200 V. Engineered for maximum performance and highly efficient operation, the LMG1210 features an ultra-fast propagation delay of 10 ns, which is faster than traditional silicon half-bridge drivers. The device also provides a low switch-node capacitance of 1 pF with user-adjustable dead time control which helps improve efficiency by allowing designers to optimize dead-time within their system.

The LMG1210 offers 3.4-ns high-side–to–low-side delay matching, a minimum pulse width of 4 ns, and an internal LDO that ensures a gate-drive voltage of 5 V regardless of supply voltage. The driver also includes a common-mode transient immunity (CMTI) of more than 300 V/ns — one of the industry’s highest — which enables high system-noise immunity.

TI’s LMG1210 driver is ideal for a broad range of applications, including high-speed DC/DC converters, motor control, Class-D audio amplifiers, Class-E wireless charging, RF envelope tracking, and other power-conversion applications.

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Mouser Electronics

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