New 1 Mbit and 2 Mbit SPI FRAM Products by Fujitsu

12 APRIL 2013

The two new FRAM products MB85RS1MT and MB85RS2MT feature 1 Mbit and 2 Mbit memory densities and are immediately available from MSC. The new products will be made available in sample quantities from the end of March 2013.
Guaranteeing 10 trillion (10¹³) read-write cycles – the two new FRAM products are ideal for applications such as smart meters, industrial machinery and medical devices. Compared to identical-density EEPROM, MB85RS1MT and MB85RS2MT reduce power consumption by 92 percent for writing operations. The new FRAM products can also make substantial reductions to component costs, mounting footprint and power consumption by replacing all of the technologies required for the system – typically consisting of EEPROM, SRAM and a battery – by single chip. As a result, FRAM strongly promotes the development of smaller systems that are more power-efficient and maintenance-friendly.
In applications such as measurement devices, industrial machinery and medical devices (e.g. hearing aids), the new 1 Mbit and 2 Mbit SPI FRAM products offer an alternative that is both considerably faster and less power-hungry than EEPROM at high density levels – resulting in systems with improved performance, better data security and a longer battery life. For industrial machinery applications – where SRAM and EEPROM are used in parallel for storing data and parameters respectively – the new FRAM products can unify the two memory technologies.

MSC
www.msc-ge.com

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